Method of forming nanoclusters
OwnerTushar Merchant, Ramachandran Muralidhar +3inventors
InventorsTushar Merchant, Ramachandran Muralidhar, Rajesh Rao, Matthew Stoker, Sherry Straub
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Abstract
A method for forming nanoclusters includes providing a semiconductor substrate; forming a dielectric layer over the semiconductor substrate, exposing the semiconductor substrate to a first flux of atoms to form first nuclei on the dielectric layer, exposing the first nuclei to a first inert atmosphere after exposing the semiconductor substrate to the first flux, and exposing the semiconductor substrate to a second flux of atoms to form second nuclei after exposing the first nuclei to an inert atmosphere.
Claims20
A method for forming nanoclusters comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- exposing the semiconductor substrate to a first flux of atoms to form first nuclei on the dielectric layer;
- exposing the first nuclei to a first inert atmosphere after the exposing the semiconductor substrate to the first flux;
- and
- exposing the semiconductor substrate to a second flux of atoms to form second nuclei after the exposing the first nuclei to an inert atmosphere.
A method of forming nanoclusters, comprising:
- providing a substrate;
- forming a dielectric layer overlying the substrate;
- placing the substrate in a deposition chamber;
- flowing a first precursor gas into the deposition chamber during a first phase to nucleate first nanoclusters on the dielectric layer;
- flowing a second precursor gas into the deposition chamber during a second phase to nucleate second nanoclusters on the dielectric layer;
- and
- performing a first anneal after the flowing the first precursor gas and before the flowing the second precursor gas.
A method of forming nanoclusters, comprising:
- providing a substrate;
- forming a dielectric layer overlying the substrate;
- placing the substrate in a deposition chamber;
- flowing a first precursor gas into the deposition chamber during a first phase to nucleate first nanoclusters on the dielectric layer with first predetermined conditions existing within the deposition chamber for a first time period;
- ending the flowing of the first precursor gas into the deposition chamber;
- performing an intermediate anneal to grow the first nanoclusters;
- and
- flowing a second precursor gas into the deposition chamber during a second phase to nucleate second nanoclusters on the dielectric layer with second predetermined conditions existing within the deposition chamber for a second time period.
Dependencies are inferred from the claim text.