Integrated circuit capacitor and method of manufacturing same
OwnerRobert Grantinventor
Life of this patent
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Abstract
A method for fabricating a capacitor using supercritical CO2 deposition of metal film layers in a reducing environment from precursors, such as metallo-organic precursors is provided. The method can generate conformal growth on a 3-D cell structure at a relatively high speed, while minimizing the occurrence of oxidation of precursors into Carbon to produce substantially pure metal film layers. A capacitor having a high k dielectric along with associated metal electrodes and contacts on a high aspect ratio 3-D cell structure is also provided.
Claims53
A method for fabricating a capacitor, the method comprising:
- providing a three dimensional electrically conductive substrate having a surface and a trench extending into the substrate from the surface;
- depositing, onto the surface of the substrate and along surfaces of the trench, a first conformal film from a mixture of a supercritical gas and a first precursor material to subsequently provide a dielectric layer;
- depositing, onto the first conformal film, a second conformal film from a solution of second precursor material to subsequently provide a top electrode layer;
- and
- forming a gas barrier atop the top electrode layer.
A method for fabricating a capacitor, the method comprising:
- providing a three dimensional substrate having a surface and a trench extending into the substrate from the surface;
- depositing, onto the surface of the substrate and along surfaces of the trench, a first conformal film from a mixture of a supercritical gas and a first precursor material to subsequently provide a bottom electrode;
- depositing, onto the first conformal film, a second conformal film from a mixture of a supercritical gas and a second precursor material to subsequently provide a dielectric layer;
- and
- depositing, onto the second conformal film, a third conformal film from a mixture of a supercritical gas and a third precursor material to subsequently provide a top electrode layer.
A capacitor comprising:
- a three dimensional electrically conductive substrate having a surface and a trench extending into the substrate from the surface;
- a conformal dielectric layer positioned on the surface of the substrate and along surfaces of the trench;
- a conformal top electrode positioned on the dielectric layer;
- and
- a conformal gas barrier layer positioned on the top electrode.
A capacitor comprising:
- a three dimensional substrate having a surface and a trench extending from the surface into the substrate;
- a conformal bottom electrode positioned on the surface of the substrate and along surfaces of the trench;
- a conformal dielectric layer positioned on the bottom electrode;
- and
- a conformal top electrode positioned on the dielectric layer.
Dependencies are inferred from the claim text.