HDP-CVD methodology for forming PMD layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYao-Hsiang Chen
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Abstract
A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap; forming a PMD layer according to an HDP-CVD process over the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate.
Claims30
A method of forming an HDP-CVD pre-metal dielectric (PMD) layer comprising the steps of:
- providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap;
- forming a PMD layer according to an HDP-CVD process on the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate.
(canceled)
A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering comprising the steps of:
- providing a semiconductor substrate comprising CMOS transistor structures separated by a gap;
- forming a PMD layer on the CMOS transistor structures according to an HDP-CVD process wherein an RF bias is adjusted to control a deposition temperature of the semiconductor substrate in the absence of a chucking bias Voltage applied to the semiconductor substrate.
(canceled)
A method of forming an HDP-CVD pre-metal dielectric (PMD) layer comprising the steps of:
- providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap;
- forming a contact etch stop layer on the semiconductor structures, said contact etch stop layer having a stress selected from the group consisting of compressive and tensile stress;
- and,
- forming a PMD layer according to a multi-step HDP-CVD process over the contact etch stop layer without applying a chucking bias Voltage to hold the semiconductor substrate.
Dependencies are inferred from the claim text.