Method of forming a composite layer, method of manufacturing a gate structure by using the method of forming the composite layer and method of manufacturing a capacitor by using the method of forming the composite layer
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-Bae Park, Hag-Ju Cho, Yu-Gyun Shin, Sang-Bom Kang
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Abstract
Methods of forming a composite layer, a gate structure and a capacitor are disclosed. In the methods, a first dielectric layer is atomic layer deposited on a substrate by using an oxidation gas and a first precursor gas that includes hafnium precursors. A second dielectric layer is then atomic layer deposited on the first dielectric layer by using a nitriding gas and a second precursor gas that includes hafnium precursors.
Claims24
A method of manufacturing a composite layer, the method comprising:
- atomic layer depositing a first dielectric layer on a substrate using an oxidation gas and a first precursor gas that includes hafnium precursors;
- and
- atomic layer depositing a second dielectric layer on the first dielectric layer using a nitriding gas and a second precursor gas that includes hafnium precursors.
A method of manufacturing a gate structure, the method comprising:
- atomic layer depositing a first insulation layer on a substrate by using an oxidation gas and a first precursor gas that includes hafnium precursors;
- atomic layer depositing a second insulation layer on the first insulation layer by using a nitriding gas and a second precursor gas that includes hafnium precursors to thereby obtain a composite gate insulation layer including the first insulation layer and the second insulation layer;
- forming a gate conductive layer on the composite gate insulation layer;
- and
- patterning the gate conductive layer and the composite gate insulation layer to form a gate electrode and a composite gate insulation layer pattern.
A method of manufacturing a gate structure, the method comprising:
- forming a tunnel dielectric layer on a substrate;
- forming a floating gate conductive layer on the tunnel dielectric layer;
- atomic layer depositing a first dielectric layer on the floating gate conductive layer by using an oxidation gas and a first precursor gas that includes hafnium precursors;
- atomic layer depositing a second dielectric layer on the first dielectric layer by using an nitriding gas and a second precursor gas that includes hafnium precursors to thereby obtain a composite dielectric layer including the first dielectric layer and the second dielectric layer;
- forming a control gate conductive layer on the composite gate dielectric layer;
- and
- sequentially patterning the control gate conductive layer, the composite gate dielectric layer, the floating gate conductive layer and the tunnel dielectric layer to form a control gate electrode, a composite gate dielectric layer pattern, a floating gate electrode and a tunnel dielectric layer pattern.
A method of manufacturing a capacitor, the method comprising:
- forming a lower electrode on a substrate;
- atomic layer depositing a first dielectric layer on the lower electrode by using an oxidation gas and a first precursor gas that includes hafnium precursors;
- atomic layer depositing a second dielectric layer on the first dielectric layer by using a nitriding gas and a second precursor gas including hafnium precursors to obtain a composite dielectric layer including the first dielectric layer and the second dielectric layer;
- and
- forming an upper electrode on the composite dielectric layer.
Dependencies are inferred from the claim text.