Method of forming a semiconductor device and an optical device and structure thereof
AssigneeFreescale Semiconductor, Inc.
InventorRobert Jones
Life of this patent
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Abstract
An integration process where a first semiconductor protective layer and a second semiconductor protective layer are formed to protect the first and second semiconductor materials, respectfully, during processing to form an optical device, such as a photodetector, and a transistor on the same semiconductor. The first semiconductor protective layer protects the semiconductor substrate during formation of the second semiconductor layer, and the second semiconductor layer protects the second semiconductor material during subsequent processing of the first semiconductor. In one embodiment, the first semiconductor includes silicon and the second semiconductor material includes germanium.
Claims20
A method comprising:
- providing a substrate comprising a first semiconductor material, wherein the substrate has a first region and a second region and the first semiconductor material comprises silicon;
- forming a gate dielectric over the substrate in the first region;
- forming a gate electrode over the gate dielectric;
- forming a first semiconductor protective layer over the first region and the second region after forming the gate electrode;
- removing portions of the first semiconductor protective layer in the second region to form openings;
- forming a second semiconductor material in the openings, wherein the second semiconductor comprises germanium;
- forming a second semiconductor protective layer over the second semiconductor in the second region;
- patterning the first semiconductor protective layer in the first region to expose an area;
- and
- forming a contact that is coupled to the area.
A method comprising:
- providing a substrate comprising silicon;
- forming a transistor on the substrate;
- forming a silicon protective layer over the substrate after forming the transistor;
- exposing portions of the substrate, wherein the exposing comprises forming windows in the silicon protective layer;
- forming a material comprising germanium in the windows;
- forming a germanium protective layer over the substrate;
- patterning the germanium protective layer and the silicon protective layer to expose an area comprising silicon;
- and
- saliciding the area.
A device comprising:
- a semiconductor substrate comprising silicon, a first region, and a second region;
- a photodetector comprising germanium over the first region;
- a transistor over the second region;
- and
- a germanium protective layer over the photodetector, but not over the transistor.
Dependencies are inferred from the claim text.