US 2006/0189047 A1 · Television, electronic apparatus, and method of fabricating semiconductor device

Abstract

[Object] The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials. [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

Claims105

Dependent claims

A method of fabricating a semiconductor device, comprising the steps of:

forming a gate electrode over an insulating surface;
forming a gate insulating film over the gate electrode;
forming a first semiconductor region over the gate insulating film;
adding a catalytic element into the first semiconductor region and heating the first semiconductor region;
forming a second semiconductor region containing an impurity element over the first semiconductor region;
heating the first semiconductor region and the second semiconductor region;
forming a first conductive layer to be in contact with the second semiconductor region by a droplet discharge method;
partially etching the first conductive layer and the second semiconductor region to form a second conductive layer, a source region and a drain region;
forming an insulating film over the second conductive layer;
partially etching the insulating film and the gate insulating film to partially expose the gate electrode;
and
forming a third conductive layer to be connected to the gate electrode by a droplet discharge method.

9 more elements

A method of fabricating a semiconductor device, comprising the steps of:

forming first and second gate electrodes over a substrate;
forming a gate insulating film over the first and second gate electrodes;
forming a first semiconductor region over the gate insulating film;
adding a catalytic element into the first semiconductor region and heating the first semiconductor region;
forming a second semiconductor region containing a first impurity element over the first semiconductor region;
heating the first and second semiconductor regions;
etching the first semiconductor region to form third and fourth semiconductor regions;
etching the second semiconductor region to form fifth and sixth semiconductor regions;
covering the third and fifth semiconductor regions with a first mask and partially covering the sixth semiconductor region with a second mask to add a second impurity element;
forming first and second conductive layers over the fifth and sixth semiconductor regions by a droplet discharge method;
etching the first and second conductive layers to form third and fourth conductive layers;
etching a part of the fifth semiconductor region and a region of the sixth semiconductor region that is covered with the second mask;
forming an insulating film over the third and fourth conductive layers;
partially etching the insulating film and the gate insulating film to partially expose the gate electrode;
and
forming a fifth conductive layer to be connected to the gate electrode by a droplet discharge method.

13 more elements

A method of fabricating a semiconductor device, comprising the steps of:

forming first and second gate electrodes over a substrate;
forming a gate insulating film over the first and second gate electrodes;
forming a first semiconductor region over the gate insulating film;
adding a catalytic element into the first semiconductor region and heating the first semiconductor region;
etching the first semiconductor region to form second and third semiconductor regions;
forming a first mask for partially covering each of the second and third semiconductor regions;
adding a first impurity element into the second and third semiconductor regions and heating the second and third semiconductor regions;
forming a second mask for covering the whole second semiconductor region and a part of the third semiconductor region;
adding a second impurity element into the third semiconductor region and heating the third semiconductor region;
forming first and second conductive layers over the first semiconductor region and the second semiconductor region by a droplet discharge method;
etching the first and second conductive layers to form third and fourth conductive layers;
forming an insulating film over the third and fourth conductive layers;
partially etching the insulating film and the gate insulating film to partially expose the gate electrode;
and
forming a fifth conductive layer to be connected to the gate electrode by a droplet discharge method.

12 more elements

A method of fabricating a semiconductor device, comprising the steps of:

forming a gate electrode over an insulating surface;
forming a gate insulating film over the gate electrode;
forming a first semiconductor region over the gate insulating film;
adding a catalytic element into the first semiconductor region and heating the first semiconductor region;
forming a second semiconductor region containing a first impurity element over the first semiconductor region;
heating the first semiconductor region and the second semiconductor region;
removing the second semiconductor region;
etching the first semiconductor region to form a third semiconductor region and a fourth semiconductor region;
forming a first mask for covering the whole fourth semiconductor region and a part of the third semiconductor region;
adding a second impurity element into the third semiconductor region;
forming a second mask for covering the whole third semiconductor region and a part of the fourth semiconductor region;
adding a third impurity element into the fourth semiconductor region;
forming first and second conductive layers over the third semiconductor region and the fourth semiconductor region by a droplet discharge method;
etching the first and second conductive layers to form a third conductive layer and a fourth conductive layer;
forming an insulating film over the third and fourth conductive layers, partially etching the insulating film and the gate insulating film to partially expose the gate electrode;
and
forming a fifth conductive layer to be connected to the gate electrode by a droplet discharge method.

14 more elements

Dependencies are inferred from the claim text.

Television, electronic apparatus, and method of fabricating semiconductor device

Life of this patent

Television, electronic apparatus, and method of fabricating semiconductor device

Life of this patent

Abstract

Claims105