Method of fabricating avalanche photodiode
AssigneeSamsung Electronics Co., Ltd.
InventorDo-Young Rhee
Life of this patent
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Abstract
A method of fabricating an avalanche photodiode is disclosed. The method includes the steps of growing a plurality of semiconductor layers sequentially on a semiconductor substrate; growing diffusion layer patterns having diffusion coefficients different from that of an amplifying layer on a portion on which a peripheral portion of a diffusion area is to be formed, on the semiconductor layers; and forming the diffusion area such that the depth of the peripheral portion thereof is different from that of the central portion thereof by diffusing impurities through the diffusion patterns.
Claims8
A method of fabricating an avalanche photodiode, the method comprising the processes of:
- growing a plurality of semiconductor layers sequentially on a semiconductor substrate, wherein one layer is an amplifying layer;
- growing diffusion layer patterns having diffusion coefficients different from that of the amplifying layer on a portion on which a peripheral portion of a diffusion area is to be formed, on the semiconductor layers;
- and
- forming the diffusion area such that the depth of the peripheral portion thereof is different from that of the central portion thereof by diffusing impurities through the diffusion layer patterns.
A method of fabricating an avalanche photodiode, the method comprising the processes of:
- growing a plurality of semiconductor layers sequentially on a semiconductor substrate, wherein one layer is an amplifying layer;
- forming diffusion layer patterns having diffusion coefficients different from that of the amplifying layer on a portion on which a peripheral portion of a diffusion area is to be formed;
- forming current blocking layers at both ends of the amplifying layer;
- depositing an impurity layer on a portion of the diffusion patterns and on which the diffusion area on the amplifying layer is to be formed;
- depositing a capping layer on the upper surfaces of the current blocking layers and the impurity layer;
- forming a diffusion area in which the depth of the peripheral portion thereof is different from that of the center portion by diffusing impurities through the diffusion patterns;
- and
- removing the capping layer and forming upper electrodes on the diffusion patterns.
A method of fabricating an avalanche photodiode, the method comprising the processes of:
- growing a first buffer layer on the semiconductor substrate;
- growing an absorption layer on the first buffer layer;
- growing a grading layer on the absorption layer;
- growing a second electric field buffer on the grading layer;
- and
- growing the amplifying layer on the second electric field buffer;
- growing diffusion layer patterns having diffusion coefficients different from that of the amplifying layer on a portion on which a peripheral portion of a diffusion area is to be formed, on the semiconductor layers;
- and
- forming the diffusion area such that the depth of the peripheral portion thereof is different from that of the central portion thereof by diffusing impurities through the diffusion layer patterns.
Dependencies are inferred from the claim text.