Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorDong Kim
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride based single crystal substrate includes forming a ZnO layer on a base substrate; forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer.
Claims20
A method for manufacturing a nitride based single crystal substrate comprising:
- forming a ZnO layer on a base substrate;
- forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source;
- growing a nitride single crystal on the low-temperature nitride buffer layer;
- and
- separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer.
A method for manufacturing a nitride based single crystal substrate comprising:
- forming a sacrificial layer made of an oxide film or a nitride film on a base substrate;
- forming a ZnO layer in a polycrystalline state on the sacrificial layer;
- forming a nano-sized ZnO pattern by partially decomposing the ZnO layer;
- forming a low-temperature nitride buffer layer using the ZnO pattern as a seed;
- growing a nitride single crystal on the low-temperature nitride buffer layer;
- and
- separating the nitride single crystal from the base substrate by chemically eliminating the sacrificial layer.
A method for manufacturing a nitride based light emitting diode comprising:
- forming a ZnO layer on a base substrate;
- forming a first conductivity type low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source;
- forming a light emitting structure including a first conductivity type nitride layer, an active layer, and a second conductivity type layer on the low-temperature nitride buffer layer;
- and
- separating the light emitting structure from the base substrate by chemically eliminating the ZnO layer.
A method for manufacturing a nitride based light emitting diode comprising:
- forming a sacrificial layer made of an oxide film or a nitride film on a base substrate;
- forming a ZnO layer in a polycrystalline state on the sacrificial layer;
- forming a nano-sized ZnO pattern by partially decomposing the ZnO layer;
- forming a first conductivity type low-temperature nitride buffer layer using the ZnO pattern as a seed;
- forming a light emitting structure including a first conductivity type nitride layer, an active layer, and a second conductivity type nitride layer on the low-temperature nitride buffer layer;
- and
- separating the light emitting structure from the base substrate by chemically eliminating the sacrificial layer.
Dependencies are inferred from the claim text.