Back to results
US 2006/0189019 A1Published application
Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
AssigneeTekcore Co., Ltd.
InventorsChia-Ming Lee, Tsung Chen, I-Ling Chen, Yu-Chuan Liu, Jen-Inn Chyi
Life of this patent
Estimating the term…
Abstract
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
Claims20
A process of forming a GaN-based layer, comprising:
- forming a first nucleation layer on a substrate at a first processing temperature;
- forming a second nucleation layer on the first nucleation layer at a second processing temperature lower than the first processing temperature;
- and
- forming an epitaxial GaN-based layer on the second nucleation layer.
1 more element
A process of forming a GaN-based layer, comprising:
- forming a plurality of nucleation layers on a substrate, wherein the nucleation layers include at least two nucleation layers formed at different temperatures;
- and
- forming an epitaxial GaN-based layer on a top of the nucleation layers.
A GaN-based semiconductor device, comprising:
- a substrate;
- a crystalline GaN-based layer;
- and
- at least two nucleation layers interposed between the substrate and the GaN-based layer.
1 more element
Dependencies are inferred from the claim text.