P-n heterojuction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same
AssigneePostech Foundation
InventorsGyu-Chul Yi, Won-II Park
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Abstract
A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.
Claims12
A nano-device comprising a p-n hetrojunction structure of a p-type semiconductor thin film and an n-type ZnO-based nanorod epitaxially grown thereon, wherein free space around portions other than tip portions of the ZnO nanorod grown on the semiconductor thin film is filled with an insulating material.
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Dependencies are inferred from the claim text.