Loading patent…
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Pooran Joshi, Wei Gao, Yoshi Ono, Sheng Hsu
Estimating the term…
A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
A method for forming a high-luminescence silicon (Si) electroluminescence (EL) phosphor, the method comprising:
A method for forming a high-luminescence silicon (Si) electroluminescence (EL) device, the method comprising:
A method for optimizing the photoluminescence (PL) of a silicon (Si) electroluminescence (EL) device, the method comprising:
A high-luminescence silicon (Si) electroluminescence (EL) device, the EL device comprising:
Dependencies are inferred from the claim text.