Nitride compound semiconductor light emitting device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorsYoshihiro Ueta, Takayuki Yuasa, Atsushi Ogawa, Yuhzoh Tsuda, Masahiro Araki
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Abstract
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
Claims11
A nitride compound semiconductor light emitting device comprising:
- a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and
- a semiconductor multilayer structure formed on the GaN substrate,
- wherein the semiconductor multilayer structure includes:
- an acceptor doping layer containing a nitride compound semiconductor;
- and
- an active layer including a light emitting region.
Dependencies are inferred from the claim text.