Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same
AssigneesSamsung Electronics Co., Ltd., Samyang EMS Co., Ltd.
InventorsJeong-Min Park, Mi-Sun Ryu, Hi-Kuk Lee, Woo-Seok Jeon
Life of this patent
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Abstract
A photoresist composition includes a novolac resin having where each of R1, R2, R3, and R4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having Z1-SH, or SH-Z2-SH, where each of Z1 and Z2 is an alkyl group or an allyl group having one through twenty carbon atoms, a sensitizer, and a solvent.
Claims12
A photoresist composition, comprising:
- a novolac resin having
- where each of R1, R2, R3, and R4 is a hydrogen atom or an alkyl group containing one through six carbon atoms and n is an integer ranging from zero through three;
- and
- a mercapto compound having
- Z1-SH, or
- SH-Z2-SH,
- where each of Z1 and Z2 is an alkyl group or an allyl group containing one through twenty carbon atoms,
- a sensitizer, and
- a solvent.
A method of forming a film pattern, comprising:
- depositing a conductive or nonconductive film on a substrate;
- coating a photoresist composition on the substrate;
- exposing the photoresist composition to light to form a masking member;
- and
- etching the thin film using the masking members,
- wherein the photoresist comprises:
- a novolac resin comprising:
- where each of R1, R2, R3, and R4 is a hydrogen atom or an alkyl group containing one through six carbon atoms and n is an integer ranging from zero through three,
- a mercapto compound having
- Z1-SH, or
- SH-Z2-SH,
- where each of Z1 and Z2 is an alkyl group or allyl group containing one through twenty carbon atoms,
- a sensitizer, and
- a solvent.
A method of manufacturing a thin film transistor array panel, comprising:
- forming a gate line comprising a gate electrode on a substrate;
- forming a gate insulating layer on the gate line;
- forming a semiconductor layer on the gate insulating layer;
- forming a data line including a source electrode and a drain electrode on the semiconductor layer;
- and
- forming a pixel electrode connected with the drain electrode,
- wherein at least one of the formings comprises lithography and etching that comprises:
- depositing a conductive or nonconductive film on a substrate;
- coating a photoresist composition on the film;
- exposing the photoresist composition to light and forming a masking member;
- and
- etching the thin film using the masking member, and
- wherein the photoresist composition comprises:
- a novolac resin having
- where each of R1, R2, R3, and R4 is a hydrogen atom or an alkyl group containing between one through six carbon atoms and n is an integer ranging from zero through three,
- a mercapto compound having
- Z1-SH, or
- SH-Z2-SH,
- where each of Z1 and Z2 is an alkyl group or allyl group containing one through twenty carbon atoms,
- a sensitizer, and
- a solvent.
Dependencies are inferred from the claim text.