Diffusion barrier for assemblies with metallic and silicon-containing components and method therefor
AssigneeGeneral Electric Company
InventorsKrishan Luthra, Douglas McKee
Life of this patent
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Abstract
A method for inhibiting diffusion of silicon into a support structure from a component formed of a silicon-containing material, and an assembly formed thereby. The component is supported and contacted by the support structure so as to define a contact interface therebetween. An barrier coating is present on the component and/or the support structure, so as to be disposed at the contact interface to prevent direct physical contact between the silicon-containing material and the superalloy substrate.
Claims20
An assembly having a component supported and contacted by a support structure so as to define a contact interface therebetween, the component being formed of a silicon-containing material and the support structure has a superalloy substrate, the assembly comprising an barrier coating on at least one of the component and the support structure, the barrier coating consisting essentially of an oxide that is more thermally stable than silica, the barrier coating being disposed at the contact interface to prevent direct physical contact between the silicon-containing material and the superalloy substrate and inhibiting diffusion of silicon from the silicon-containing material into the superalloy substrate.
A method of inhibiting diffusion of silicon into a support structure from a component formed of a silicon-containing material, the method comprising the steps of:
- depositing an barrier coating on at least one of the component and the support structure, the barrier coating consisting essentially of an oxide that is more thermally stable than silica;
- and then
- attaching the component to the support structure so that the component is supported and contacted by the support structure so as to define a contact interface between the component and a superalloy substrate of the support structure, wherein the barrier coating is disposed at the contact interface to prevent direct physical contact between the silicon-containing material and the superalloy substrate.
Dependencies are inferred from the claim text.