Pressurized reactor for thin film deposition

A reactor for use in thin film deposition, the reactor comprising:

• a processing module having a chamber within which a substrate can be placed for thin film deposition;
• an exit portion coupled to the processing module for providing a substantially pressure tight environment within a pressurized gas can be accommodated;
• an outlet on the exit portion through which the substrate can be removed;
• and
• a biasing gate positioned within the exit portion and adjacent the outlet for engaging the outlet to minimize outflow of pressure and gas from within the chamber.

A method for depositing a thin film onto a substrate, the method comprising:

• providing an apparatus having a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate, an outlet in substantial alignment with the chamber and through which a substrate can be removed, and a biasing gate positioned within the chamber adjacent the outlet for engaging the outlet to minimize outflow of pressure and gas therefrom;
• placing a substrate within the chamber;
• advancing the gate to a closed position, such that the gate engages the outlet;
• injecting into the chamber a mixture of a pressurized gas and a material for deposition onto the substrate;
• and
• allowing a thin film to be formed on the substrate from the mixture.

A method for depositing a thin film onto a substrate, the method comprising:

• providing a chamber within which a pressurized gas can be accommodated for thin film deposition of a substrate;
• placing a substrate into the chamber through an outlet thereof;
• blocking the outlet from within the chamber to minimize outflow of pressure and gas therefrom;
• injecting into the chamber a mixture of a pressurized gas and a material for deposition onto the substrate;
• and
• allowing a thin film to be formed on the substrate from the mixture.