Substrate processing apparatus and substrate processing method
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuo Tanaka, Masaaki Ueno, Masashi Sugishita
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AssigneeHitachi Kokusai Electric Inc.
InventorsKazuo Tanaka, Masaaki Ueno, Masashi Sugishita
Estimating the term…
It is an object of the invention to provide a substrate processing equipment that can predict a temperature of a substrate and easily control temperature of the substrate. Formed in a reactor (processing chamber) 3 are four temperature adjustment zones, of which setting and adjustment of temperature can be made by zone heaters 340-1 to 340-4. A temperature controller 4 mixes temperatures detected by inner thermocouples 302-1 to 302-4 and outer thermocouples 342-1 to 342-4 to calculate predicted temperatures of substrates by means of the first-order lag calculation on the basis of time constants of temperatures of substrates heated by the zone heaters 340-1 to 340-4. Also, the temperature controller 4 calculates electric power values (operating variables) for the zone heaters 340-1 to 340-4 with the use of predicted temperatures of substrates to output the same to the zone heaters 340-1 to 340-4.
A substrate processing equipment comprising
A substrate processing equipment comprising
A substrate processing method comprising the steps of:
A substrate processing method for a substrate processing equipment comprising a reaction chamber that processes a substrate, heating means that heats an interior of the reaction chamber, control means that controls the heating means, first temperature detection means that detects temperature between the heating means and the substrate, and second temperature detection means that detects temperature nearer to the substrate than the first temperature detection means, the method comprising the steps of:
Dependencies are inferred from the claim text.