Semiconductor laser device and method for manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorYoung Shin
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Abstract
The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGalnP-based clad layer formed on an active layer, and a second p-type AlGalnP-based clad layer formed on the first p-type AlGalnP-based clad layer and having a ridge structure. The first p-type AlGalnP-based clad layer is Zn-doped with a concentration that restrains Zn diffusion into the active layer, and the second p-type AlGalnP-based clad layer is Mg-doped with a concentration higher than that of the first AlGalnP-based clad layer.
Claims17
A semiconductor laser device comprising:
- an n type AlGaInP-based clad layer formed on a substrate;
- an active layer formed on the n-type AlGaInP-based clad layer;
- a first p-type AlGaInP-based clad layer formed on the active layer;
- and
- a second p-type AlGaInP-based clad layer having a ridge structure formed on the first p-type AlGaInP-based clad layer,
- wherein the first p-type AlGaInP-based clad layer is Zn-doped with a concentration that restrains Zn diffusion into the active layer, and the second p-type AlGaInP-based clad layer is Mg-doped with a concentration higher than that of the first p-type AlGalnP-based clad layer.
A method for manufacturing a semiconductor laser device comprising steps of:
- sequentially forming an n-type AlGaInP-based clad layer and an active layer on a substrate;
- forming a first p-type AlGaInP-based clad layer Zn-doped with a concentration that restrains Zn diffusion into the active layer;
- and
- forming a second p-type AlGaInP-based clad layer Mg-doped with a concentration higher than that of the first p-type AlGaInP-based clad layer.
Dependencies are inferred from the claim text.