Semiconductor Laser Device
AssigneeKabushiki Kaisha Toshiba
InventorAkira TANAKA
Life of this patent
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Abstract
In various aspects, a semiconductor laser device may include a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and having a nitride semiconductor; a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor, the second clad layer having a ridge waveguide and a side portion provided in both sides of the ridge waveguide; an upper electrode provided on the ridge waveguide; and a dielectric layer provided on a side surface of the ridge waveguide, wherein the side portion of the second clad layer has a lower activation ratio of a second conductivity type impurity than the ridge waveguide of the second clad layer.
Claims11
A semiconductor laser device, comprising:
- a first clad layer of a first conductivity type having a nitride semiconductor;
- an active layer provided on the first clad layer and having a nitride semiconductor;
- a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor, the second clad layer having a ridge waveguide and a side portion provided in both sides of the ridge waveguide;
- an upper electrode provided on the ridge waveguide;
- and
- a dielectric layer provided on a side surface of the ridge waveguide,
- wherein the side portion of the second clad layer has a lower activation ratio of a second conductivity type impurity than the ridge waveguide of the second clad layer.
A semiconductor laser device, comprising:
- a first clad layer of a first conductivity type having a nitride semiconductor;
- an active layer provided on the first clad layer and having a nitride semiconductor;
- a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor, the second clad layer having a ridge waveguide and a side portion provided in a side of the ridge waveguide;
- an upper electrode provided on the ridge waveguide;
- and
- a dielectric layer provided on a side surface of the ridge waveguide,
- wherein the side portion of the second clad layer has a higher content ratio of hydrogen than the ridge waveguide of the second clad layer.
A semiconductor laser device, comprising:
- a first clad layer of a first conductivity type having a nitride semiconductor;
- an active layer provided on the first clad layer and having a nitride semiconductor;
- a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor, the second clad layer having a ridge waveguide and a side portion provided in a side of the ridge waveguide;
- an upper electrode provided on the ridge waveguide;
- and
- a dielectric layer provided on a side surface of the ridge waveguide,
- wherein an upper edge of the dielectric layer is provided higher than an upper edge of the ridge waveguide of the second clad layer.
Dependencies are inferred from the claim text.