Semiconductor laser diode
AssigneeOpnext Japan, Inc.
InventorsEtsuko Nomoto, Tsukuru Ohtoshi
Life of this patent
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Abstract
A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern.
Claims16
A semiconductor laser device comprising:
- a first conduction type semiconductor substrate;
- a first conduction type cladding layer formed over the substrate;
- an active layer formed over the cladding layer;
- and
- a second conduction type cladding layer formed over the active layer;
- wherein, in view of an oscillation wavelength of the semiconductor laser device, a plurality of layers each having a refractive index higher than a refractive index of the first conduction type cladding layer and comprising a material different from the first conduction type cladding layer are inserted in the first conduction type cladding layer at a distance of less than ¼ of a vertical spot size over a range larger than the vertical spot size.
A semiconductor laser device comprising:
- a first conduction type semiconductor substrate;
- a first conduction type cladding layer formed over the substrate;
- an active layer formed over the cladding layer;
- and
- a second conduction type cladding layer formed over the active layer;
- wherein, in view of an oscillation wavelength of the semiconductor laser device, a plurality of layers each having a refractive index higher than a refractive index of the first conduction type cladding layer and comprising a material different from the first conduction type cladding layer are inserted in the first conduction cladding layer and the distance between each of the layers are arranged such that a change of a near field optical output of the semiconductor laser device is continuous.
A semiconductor laser device:
- wherein a cladding layer put between a semiconductor substrate and an active layer includes a first cladding layer, a second cladding layer and a stacked body inserted between the first and the second cladding layers;
- and
- wherein the stacked body comprises a layer having a refractive index higher than that of the first or the second cladding layer, comprising a material different from that of the first or the second cladding layer and having a thickness of about electron de Broghie wavelength or less, and a layer having a refractive index substantially equal to that of the first or the second cladding layer which are stacked alternately, and the stacked body has a thickness greater than a total thickness of the first and the second cladding layers or more and is inserted.
Dependencies are inferred from the claim text.