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US 2006/0187985 A1Published application
High reliability etched-facet photonic devices
AssigneeBinOptics Corporation
InventorAlex Behfar
Life of this patent
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Abstract
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
Claims11
A photonic device comprising:
- a substrate;
- at least a first epitaxial semiconductor structure including an active layer;
- at least a first etched facet fabricated in said structure;
- at least a first electrode on said structure;
- and
- a protective layer covering all surfaces of said semiconductor structure within 750 nm of said facet at the active region.
3 more elements
A process for fabricating a photonic device, comprising:
- forming on a substrate an epitaxial semiconductor structure incorporating an active layer;
- dry etching said structure to form a laser having at least one facet;
- covering said laser and said facet with a protective conformal layer;
- opening a contact window in said protective layer;
- and
- depositing a metal layer to cover said window and to electrically contact said laser.
3 more elements
Dependencies are inferred from the claim text.