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OwnerYasuo Sato, Jugo Mitomo +3inventors
InventorsYasuo Sato, Jugo Mitomo, Mikihiro Yokozeki, Tomonori Hino, Hironobu Narui
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A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga1-xInxNyAs1-y-zSbz mixed crystal (0≦x<1, 0<y<1, 0≦z<1, and 0<y+z<1) and a barrier layer made of a GaNvAs1-v mixed crystal (0≦v<1) are layered. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized. The hydrogen concentration can be decreased by decreasing the flow rate of the organic nitrogen compound used as a raw material of nitrogen when the active layer is grown.
A semiconductor light emitting device in which an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N),
A method of manufacturing a semiconductor light emitting device, in which an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N),
An optical module comprising a semiconductor light emitting device,
Dependencies are inferred from the claim text.