High frequency semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoshihiro Notani
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Abstract
A high frequency semiconductor device includes a semiconductor substrate, a high frequency semiconductor element on the semiconductor substrate, a high frequency signal transmission line connected at a first end to the high frequency semiconductor element, a high frequency signal input/output pad connected to a second end of the high frequency signal transmission line, the high frequency signal input/output pad extending perpendicular to the length direction of the high frequency signal transmission line, and ground potential pads on opposite longitudinal sides of the high frequency signal input/output pad.
Claims9
A high frequency semiconductor device comprising:
- a semiconductor substrate;
- a high frequency semiconductor element on said semiconductor substrate;
- a high frequency signal transmission line on said semiconductor substrate and having a first end connected to said high frequency semiconductor element;
- a high frequency signal input/output pad on said semiconductor substrate and connected to a second end of said high frequency signal transmission line, said high frequency signal input/output pad extending perpendicular to a length direction of said high frequency signal transmission line;
- and
- ground potential pads on said semiconductor substrate, said ground potential pads being disposed on opposite longitudinal sides of said high frequency signal input/output pad.
A high frequency semiconductor device comprising:
- a semiconductor substrate;
- a high frequency semiconductor element on said semiconductor substrate;
- a high frequency signal transmission line on said semiconductor substrate and having a first end connected to said high frequency semiconductor element;
- a high frequency signal input/output pad on said semiconductor substrate and connected to a second end of said high frequency signal transmission line, said high frequency signal input/output pad extending perpendicular to length direction of said high frequency signal transmission line;
- a first ground potential pad on said semiconductor substrate and located near a side of said high frequency signal input/output pad, opposite a side connected to said high frequency signal transmission line and enclosing said high frequency signal input/output pad on three sides;
- and
- a second ground potential pad on said semiconductor substrate, located near said side of said high frequency signal input/output pad connected to said high frequency signal transmission line.
Dependencies are inferred from the claim text.