Magnetoresistive sensor with a free layer stabilized by direct coupling to in stack antiferromagnetic layer
AssigneeHitachi Global Storage Technologies
InventorsHardayal Gill, Kuok Ho
Life of this patent
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Abstract
A magnetoresistive sensor having a free layer biased by an in stack bias layer that comprises a layer of antiferromagnetic material. The bias layer can be IrMnCr, IrMn or some other antiferromagnetic material. The free layer is a synthetic free layer having first and second magnetic layers antiparallel coupled across an AP coupling layer. The first magnetic layer is disposed adjacent to a spacer or barrier layer and the second magnetic layer is exchange coupled with the IrMnCr bias layer. The bias layer biases the magnetic moments of the free layer in desired directions parallel with the ABS without pinning the magnetic moments of the free layer.
Claims26
A magnetoresistive sensor, comprising:
- a magnetic pinned layer structure;
- a magnetic free layer structure;
- a non-magnetic, electrically conductive spacer layer sandwiched between the free and pinned layer structures;
- and
- a bias layer comprising an antiferromagnetic material in contact with the free layer structure;
- wherein the free layer structure comprises a first free magnetic layer, a second free magnetic layer and a coupling layer sandwiched between the first and second free magnetic layers, and wherein the first free magnetic layer is adjacent to the spacer layer and the second free magnetic layer is in contact with the bias layer.
A magnetoresistive sensor, comprising:
- a magnetic pinned layer structure;
- a magnetic free layer structure;
- a non-magnetic, electrically insulating barrier layer sandwiched between the free and pinned layer structures;
- and
- a bias layer comprising an antiferromagnetic material in contact with the free layer structure.
A magnetoresistive sensor, comprising:
- a free layer structure including a first free magnetic layer, a second free magnetic layer and a non-magnetic, electrically conducive spacer layer disposed between the first and second free magnetic layers;
- and
- a bias layer comprising an antiferromagnetic material exchange coupled with the second free magnetic layer.
A magnetic data recording system, comprising:
- a magnetic medium;
- a slider;
- an actuator connected with the slider for moving the slider adjacent to a surface of the magnetic medium;
- and
- a magnetoresisitve sensor connected with the slider, the magnetoresistive sensor comprising:
- a free layer structure including a first free magnetic layer, a second free magnetic layer and a non-magnetic, electrically conducive spacer layer disposed between the first and second free magnetic layers;
- and
- a bias layer comprising an antiferromagnetic material exchange coupled with the second free magnetic layer.
Dependencies are inferred from the claim text.