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AssigneeSony Corporation
InventorsKeiji Mabuchi, Nobuhiro Karasawa
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In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.
A solid-state imager device having a wiring layer on a first surface side of a semiconductor substrate on which pixels including photoelectric conversion elements are formed and taking in incident light from a second surface side which is the opposite side with respect to said wiring layer comprising:
A drive method of a solid-state imager device having a wiring layer on a first surface side of a semiconductor substrate on which pixels including photoelectric conversion elements are formed and taking in incident light from a second surface side which is the opposite side with respect to said wiring layer,
A solid-state imager device, wherein
A solid-state imager device having a wiring layer on a first surface side of a semiconductor substrate on which pixels including photoelectric conversion elements are formed and taking in incident light from a second surface side which is the opposite side with respect to said wiring layer comprising:
A camera apparatus provided with solid-state imager device having a wiring layer on a first surface side of a semiconductor substrate on which pixels including photoelectric conversion elements are formed and taking in incident light from a second surface side which is the opposite side with respect to said wiring layer comprising:
Dependencies are inferred from the claim text.