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AssigneesSharp Kabushiki Kaisha, Nobuyoshi Koshida
InventorsTadashi Iwamatsu, Hiroyuki Hirakawa, Nobuyoshi Koshida
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An electron emitting element is of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of the semiconductor layer by causing the organic compound to be adsorbed on the semiconductor surface. Herein, the semiconductor layer can be made of silicon or polysilicon and partly or as a whole porous. The absorbed organic compound can be a non-cyclic hydrocarbon, a compound obtained by coupling at least an aldehyde group to a non-cyclic hydrocarbon, or a non-cyclic hydrocarbon having an unsaturated bond. As a result, there can be provided an electron emitting element capable of stably operating in the atmosphere or in a low vacuum even when being operated in the atmosphere or in the low vacuum and an imaging device using the electron emitting element.
An electron emitting element of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of said semiconductor layer by causing a organic compound to be adsorbed on the semiconductor surface.
An imaging device using, as a charger, an electron emitting element of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, and an organic compound adsorption layer is formed on a semiconductor surface of said semiconductor layer by causing a organic compound to be adsorbed on the semiconductor surface, wherein an electrostatic latent image carrier is charged by emitting electrons from said electron emitting element in the atmosphere.
An imaging device using, as a charge feed device, an electron emitting element of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, and an organic compound adsorption layer is formed on a semiconductor surface of said semiconductor layer by causing a organic compound to be adsorbed on the semiconductor surface, wherein a latent image is formed directly on an electrostatic latent image carrier by emitting electrons from said electron emitting element in the atmosphere.
Dependencies are inferred from the claim text.