Semiconductor device with a number of bonding leads and method for producing the same
AssigneeInfineon Technologies AG
InventorRalf Otremba
Life of this patent
Estimating the term…
Abstract
A semiconductor device (7) has a number of bonding leads (1, 2, 3) with more than one individual bonding lead (1) being arranged on an individual contact area (4) of a semiconductor chip (5) or a wiring component (6) of the semiconductor device (7). The bonding leads (1, 2 and 3) of a stack (8) form ohmic transitions (12, 13) in their boundary layers. For this purpose, the stacked contact elements (9, 10) have different materials with a different material composition.
Claims20
A semiconductor device comprising a number of bonding leads, wherein
- more than one individual bonding lead are arranged on an individual contact area of a semiconductor chip or a wiring component of the semiconductor device,
- the bonding leads form a stack of at least two contact elements arranged one on top of the other,
- the material of the lower, first contact element comprises an ohmic contact transition with the material of the contact area,
- the material of the stacked, second contact element comprises an ohmic contact transition with the material of the first contact element arranged there under, and
- the materials of the first and second contact elements that are stacked one on top of the other and bonded comprise different material compositions.
A method for producing a semiconductor device with a number of bonding leads, more than one individual bonding lead being arranged on an individual contact area of a semiconductor chip, and the method comprising the following method steps:
- producing a semiconductor chip or a wiring component of the semiconductor device with at least one individual contact area for a number of bonding leads, which are stacked on the contact area;
- providing at least two contact elements to be arranged one on top of the other, which comprise different material compositions;
- staggered bonding of the contact elements, the material of the lowermost, first contact element forming an ohmic contact transition with the contact area during the bonding on the contact area, and the stacked, second contact element forming an ohmic contact during the bonding to the first contact element arranged there under.
A semiconductor device comprising:
- a plurality of bonding leads,
- a contact area,
- wherein
- the plurality of bonding leads form a stack of at least two contact elements arranged one on top of the other,
- the material of the lower, first contact element comprises an ohmic contact transition with the material of the contact area,
- the material of the stacked, second contact element comprises an ohmic contact transition with the material of the first contact element arranged there under, and
- the materials of the first and second contact elements that are stacked one on top of the other comprise different material compositions.
Dependencies are inferred from the claim text.