High reflectivity p-contacts for group lll-nitride light emitting diodes
AssigneeGELcore, LLC
InventorHari Venugopalan
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Abstract
A flip-chip LED device (10) includes a plurality of group III-nitride semiconductor layers (22) defining a p/n junction and including a top p-type group III-nitride layer (28), and a p-contact (30, 30′, 30″) for flip-chip bonding the top p-type group III-nitride layer. The p-contact includes an aluminum layer (32) disposed on the top p-type group III-nitride layer (28), and an interface layer (40, 66, 72, 80) disposed between the aluminum layer and the top p-type group III-nitride layer. The interface layer reduces a contact resistance between the aluminum layer (32) and the top p-type group III-nitride layer (28). The interface layer comprises one or more group III-nitride layers.
Claims8
A flip-chip LED device comprising:
- a plurality of group III-nitride semiconductor layers defining a p/n junction and including a top p-type group III-nitride layer;
- and
- a p-contact for flip-chip bonding the top p-type group III-nitride layer, the p-contact including:
- an aluminum layer disposed on the top p-type group III-nitride layer, and
- an interface layer disposed between the aluminum layer and the top p-type group III-nitride layer and reducing a contact resistance therebetween, the interface layer comprising one or more group III-nitride layers.
Dependencies are inferred from the claim text.