Semiconductor device and manufacturing method thereof
AssigneeRenesas Technology Corp.
InventorsOsamu Ikeda, Masahide Okamoto, Yukihiro Satou
Life of this patent
Estimating the term…
Abstract
In a semiconductor module connecting a semiconductor element and a passive element to a printed board, each of connection portions between the semiconductor element and the printed board and between the passive element and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher. Specifically, by connecting them using Pb-free solder with a melting point of 260° C. or lower, the printed board capable of lowering in cost, lightening, and reducing back height can be applied to a module board.
Claims19
A semiconductor device comprising:
- a semiconductor element;
- a passive component;
- and
- a printed board connecting said semiconductor element and said passive component,
- wherein each of connection portions between said semiconductor element and said printed board and between said passive component and the printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher.
A semiconductor device comprising:
- a semiconductor element;
- a passive element;
- and
- a printed board connecting said semiconductor element and said passive element,
- wherein each of connection portions between said semiconductor element and said printed board and between said passive component and said printed board includes an intermetallic compound with a melting point of 260° C. or higher.
A manufacturing method of a semiconductor device, comprising the step of:
- connecting a semiconductor element and a passive element to a printed board through metal junctions,
- wherein said step includes:
- interposing compound foils, in which a metal layer with a melting point of 260° C. or lower that forms a intermetallic compound with a melting point of 260° C. or higher by reacting with a metal layer of a melting point of 260° C. or higher is provided, between said semiconductor device and said printed board and between said passive component and said printed board;
- and
- heating said compound foil in such an interposed state-to form said metal junction.
A manufacturing method of a semiconductor device, comprising the step of:
- connecting a semiconductor element and a passive component to a printed board through metal junctions,
- wherein said step includes:
- providing, on a side of said printed board, a metal layer with a melting point of 260° C. or lower that forms an intermetallic compound with a melting point of 260° C. or higher by reacting with a metal layer with a melting point of 260° C. or higher;
- mounting said semiconductor element and said passive component on said printed board;
- and
- forming said metal junction by being heated in such an mounted state.
A semiconductor device comprising:
- a semiconductor element;
- and
- a printed board connecting said semiconductor element,
- wherein a connection portion of said semiconductor element and said printed board includes a metal with a melting point of 260° C. or higher and an intermetallic compound with a melting point of 260° C. or higher.
A semiconductor device comprising:
- a semiconductor element;
- and
- a printed board connecting said semiconductor element,
- wherein a connection portion of said semiconductor element and said printed board includes an intermetallic compound with a melting point of 260° C. or higher.
A manufacturing method of a semiconductor device, comprising the step of:
- connecting a semiconductor element to a printed board through a metal junction,
- wherein said step includes:
- interposing a compound foil, in which a metal layer with a melting point of 260° C. or lower that forms a intermetallic compound with a melting point of 260° C. or higher by reacting with a metal layer of a melting point of 260° C. or higher is provided, between said semiconductor device and said printed board;
- and
- heating said compound foil in such an interposed state to form said metal junction.
A manufacturing method of a semiconductor device, comprising the step of:
- connecting a semiconductor element to a printed board through a metal junction,
- wherein the step includes:
- providing, on a side of said printed board, a metal layer with a melting point of 260° C. or lower that forms an intermetallic compound with a melting point of 260° C. or higher by reacting with a metal layer with a melting point of 260° C. or higher;
- mounting said semiconductor element on said printed board;
- and
- forming said metal junction by being heated in such an mounted state.
Dependencies are inferred from the claim text.