Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorsTatsuya Usami, Koichi Ohto, Toshiyuki Takewaki
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Abstract
A first gas including a silicon-containing compound is introduced into a vacuum chamber, to expose a semiconductor substrate placed in the chamber to the first gas atmosphere (silicon processing step). Then the pressure inside the vacuum chamber is reduced to a level lower than the pressure at the time of starting the silicon processing step (depressurizing step). Thereafter, a second gas including a nitrogen-containing compound is introduced into the vacuum chamber, and the semiconductor substrate is irradiated with the second gas plasma (nitrogen plasma step).
Claims6
A method of manufacturing a semiconductor device, comprising:
- placing a semiconductor substrate with a conductive layer composed essentially of a copper-containing metal exposed on a surface of said semiconductor substrate in a vacuum chamber;
- introducing a first gas composed essentially of a silicon-containing compound into said vacuum chamber, so as to expose said semiconductor substrate in said first gas atmosphere;
- reducing, after said introducing of said first gas, a pressure in said vacuum chamber to a second pressure lower than a first pressure in said vacuum chamber set at the time of starting said introducing of said first gas;
- and
- introducing a second gas composed essentially of a nitrogen-containing compound into said vacuum chamber after said reducing of the pressure in said vacuum chamber, so as to irradiate said semiconductor substrate with a plasma of said second gas.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a conductive layer composed essentially of a copper-containing metal, filled in a recessed portion provided in said insulating layer;
- an alloy layer containing copper and silicon, formed in a surface layer of said conductive layer;
- and
- a nitride layer formed by nitriding said insulating layer, in a uniform thickness in a surface layer of said insulating layer.
Dependencies are inferred from the claim text.