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US 2006/0186542 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeCasio Computer Co., Ltd.
InventorsTakeshi Wakabayashi, Ichiro Mihara
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate which has an integrated circuit formed on a front surface thereof, and a rough surface with a height difference of 1 to 5 μm on a rear surface thereof. A protective film is provided on the rear surface of the semiconductor substrate.
Claims20
A semiconductor device comprising:
- a semiconductor substrate which has an integrated circuit formed on a front surface thereof, and a rough surface with a height difference of 1 to 5 μm on a rear surface thereof;
- and
- a protective film provided on the rear surface of the semiconductor substrate.
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate which has a semiconductor integrated circuit formed on a front surface thereof and has a rear surface on the opposite side of the front surface;
- processing the rear surface of the semiconductor substrate to reduce the thickness of the semiconductor substrate;
- roughening the rear surface of the semiconductor substrate by wet etching;
- forming a protective film on the rear surface of the semiconductor substrate;
- and
- dicing the semiconductor substrate together with the protective film to obtain a plurality of semiconductor devices each having at least one of the integrated circuits.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate having a plurality of connection pads;
- forming a wiring line connected to the connection pads;
- forming columnar electrodes on the wiring line;
- forming a sealing film between the columnar electrodes on the semiconductor substrate;
- processing a rear surface of the semiconductor substrate to reduce the thickness of the semiconductor substrate, and then subjecting the rear surface of the semiconductor substrate to wet etching;
- forming a protective film on the rear surface of the semiconductor substrate subjected to the wet etching;
- and
- dicing the semiconductor substrate together with the sealing film and the protective film to obtain a plurality of semiconductor devices.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- roughening a minute and acutely-angled irregular rear surface and side surface of a semiconductor substrate to change into a rough rear surface and side surface by wet etching;
- and
- forming a protective film on the rear surface and side surface of the semiconductor substrate.
A method of manufacturing a semiconductor device, comprising:
- forming columnar electrodes on a semiconductor wafer;
- forming a sealing film on the semiconductor wafer between the peripheries of the columnar electrodes;
- grinding a rear surface of the semiconductor wafer;
- cutting from a rear surface side of the semiconductor wafer to at least a halfway point of the sealing film to form grooves for separation into individual semiconductor substrates;
- roughening the rear surface and side surface of the semiconductor wafer by wet etching;
- forming a protective film on the rear surface of the semiconductor wafer including inside of the grooves;
- and
- cutting the protective film formed in the grooves to obtain a plurality of semiconductor devices.
5 more elements
Dependencies are inferred from the claim text.