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US 2006/0186504 A1Published application
CMOS image sensor for reducing partition noise
AssigneeMagnaChip Semiconductor, Ltd.
InventorsChang-Min Bae, Kyung-Jin Shim
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Abstract
A CMOS image sensor according to an embodiment of the present invention includes a unit pixel, including a transfer transistor controlled by a transfer control signal; and a transfer control signal controller for controlling a rising and a falling times of the transfer control signal, wherein the falling time of the transfer control signal is sufficiently increased to reduce a partition noise.
Claims20
A CMOS image sensor, comprising:
- a unit pixel, including a transfer transistor controlled by a transfer control signal;
- and
- a transfer control signal controller for controlling a rising and a falling times of the transfer control signal,
- wherein the falling time of the transfer control signal is sufficiently increased to reduce a partition noise.
1 more element
A CMOS image sensor, comprising:
- a plurality of unit pixels arranged in a column X a row form, each including a transfer transistor controlled by a transfer control signal;
- and
- a transfer control signal controller for controlling a rising and a falling times of the transfer control signal;
- and
- a plurality of capacitive parts connected between a ground voltage and a common node which is connected between an output terminal of the transfer control signal controller and gates of the transfer transistors to thereby increase the falling time of the transfer transistor when the transfer transistors contained in the unit pixels of the same row are turned off,
- wherein, the plural unit pixels are disposed in the same row being controlled by the single transfer control signal controller.
3 more elements
Dependencies are inferred from the claim text.