Photoelectric Conversion Device and Manufacturing Method of the Same, and a Semiconductor Device

A method for manufacturing a photoelectric conversion device, comprising the steps of:

• forming a photoelectric conversion layer over a substrate, comprising a first semiconductor layer having one conductivity type, a second semiconductor layer, and a third semiconductor layer having an inverse conductivity type to the conductivity type of the first semiconductor layer;
• forming an insulating layer having a first opening, over the photoelectric conversion layer;
• forming a second opening in the photoelectric conversion layer;
• forming a first electrode layer is in contact with the first semiconductor layer of the photoelectric conversion layer through the second opening;
• forming a second electrode layer is in contact with the third semiconductor layer of the photoelectric conversion layer through the first opening;
• wherein the third semiconductor layer is removed in a region that is not covered with the first electrode, the insulating layer, and the second electrode.

A semiconductor device comprising:

• a photoelectric conversion element over a substrate;
• and
• a circuit for signal processing of an output value of the photoelectric conversion element,
• wherein the photoelectric conversion element comprises:
• a photoelectric conversion layer comprising a first semiconductor layer having one conductivity type, a second semiconductor layer, and a third semiconductor layer having an inverse conductivity type to the conductivity type of the first semiconductor layer;
• a first electrode is in contact with the first semiconductor layer through an opening formed in the photoelectric conversion layer;
• an insulating layer is in contact with the third semiconductor layer;
• and
• a second electrode is in contact with the third semiconductor layer through an opening formed in the insulating layer,
• wherein the third semiconductor layer is removed in a region that is not covered with the first electrode, the insulating layer, and the second electrode of the photoelectric conversion layer,
• wherein the circuit comprises a plurality of thin film transistors;
• and
• wherein each of the plurality of the thin film transistors comprises:
• an island-like semiconductor region comprising a source region, a drain region, and a channel formation region;
• a gate insulating film;
• a gate electrode;
• a source electrode electrically connected to the source region;
• and
• a drain electrode electrically connected to the drain region.

A photoelectric conversion device comprising:

• a first electrode over a substrate;
• a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film;
• an insulating film covering the first electrode and the photoelectric conversion layer;
• a second electrode over the insulating film, and in contact with a part of the first electrode;
• and
• a third electrode over the insulating film, and in contact with a part of the third semiconductor film,
• wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode.