Low power magnetoelectronic device structures utilizing enhanced permeability materials

A method for making a magnetoelectronic device structure, the method comprising:

• fabricating a magnetoelectronic device;
• depositing a conducting line;
• and
• forming a first layer of enhanced permeability dielectric material having a magnetic permeability no less than approximately 1.5, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, said first layer of enhanced permeability dielectric material is disposed adjacent said magnetoelectronic device.

A method for fabricating an enhanced permeability dielectric material having a magnetic permeability no less than approximately 1.5 and having a predetermined thickness, the method comprising:

• depositing a discontinuous layer of nanoparticles exhibiting superparamagnetic properties;
• forming a layer of dielectric material overlying said discontinuous layer of nanoparticles;
• and
• alternately repeating the step of depositing a discontinuous layer of nanoparticles and the step of forming a layer of dielectric material until a stack that comprises a plurality of layers of said dielectric material and discontinuous layers of said nanoparticles interposed therebetween is formed having approximately the predetermined thickness.