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US 2006/0186489 A1Published application
Semiconductor device and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasahiro Koike, Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Akira Nishiyama
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Abstract
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
Claims16
A semiconductor device comprising:
- a substrate;
- an insulating film formed above the substrate and comprising Hf, Si, O and N, a content of Hf—N bonds being 1 atomic % or more;
- and
- an electrode formed above the insulating film.
1 more element
A semiconductor device comprising:
- a substrate;
- an insulating film formed above the substrate and comprising Zr, Si, O and N, a content of Zr—N bonds being 1 atomic % or more;
- and
- an electrode formed above the insulating film.
1 more element
Dependencies are inferred from the claim text.