US 2006/0186488 A1 · Semiconductor device and method of manufacturing semiconductor device

Abstract

Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Claims12

Dependent claims

A method for manufacturing a semiconductor device, comprising:

forming above a substrate an insulating film comprising a metal, Si, N and O, by off-axis sputtering, the insulating film comprising more metal-N bonds than the total sum of metal-metal bonds and metal-Si bonds;
and
forming an electrode above the insulating film.

Dependencies are inferred from the claim text.

Facts

Application

11/407,066Filed 20 Apr 2006

Priority

JP 2003-0314667 Feb 2003

Published

24 Aug 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation
H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates

Abstract

Facts

Application

11/407,066Filed 20 Apr 2006

Priority

JP 2003-0314667 Feb 2003

Published

24 Aug 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation
H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates

Semiconductor device and method of manufacturing semiconductor device

Life of this patent

Abstract

Claims12

Semiconductor device and method of manufacturing semiconductor device

Life of this patent

Abstract

Claims12