Semiconductor device and method for manufacturing the same
AssigneeOki Electric Industry Co., Ltd.
InventorHirotaka MORI
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes (i) a semiconductor layer, (ii) a first insulating film formed in the semiconductor layer, (iii) a conductive film continuously formed on the semiconductor layer and the first insulation film in a line shape, (iv) a second insulating film formed between the conductive film and the semiconductor layer along the conductive film, (v) a sidewall portion which is formed on a sidewall of the conductive film along the conductive film and which includes an oxide film and a first nitride film that is formed above the semiconductor layer and separated from a region above the first insulating film through the oxide film, (vi) and impurity diffusion regions formed on a surface of the semiconductor layer on both sides of the sidewall portion.
Claims9
A semiconductor device, comprising:
- a semiconductor layer;
- a first insulating film formed in said semiconductor layer;
- a conductive film continuously formed on said semiconductor layer and said first insulation film in a line shape;
- a second insulating film formed between said conductive film and said semiconductor layer along said conductive film;
- a sidewall portion formed on a sidewall of said conductive film along said conductive film, said sidewall portion including an oxide film and a first nitride film that is formed above said semiconductor layer and separated from a region above said first insulating film through said oxide film;
- and
- impurity diffusion regions formed on a surface of said semiconductor layer on both sides of said sidewall portion.
A semiconductor device, comprising:
- a semiconductor layer;
- a first insulating film formed in said semiconductor layer;
- a conductive film continuously formed on said semiconductor layer and said first insulation film in a line shape;
- a second insulating film formed between said conductive film and said semiconductor layer along said conductive film;
- a sidewall portion formed on a sidewall of said conductive film along said conductive film, said sidewall portion including a nitride film only on a region above said semiconductor layer;
- and
- impurity diffusion regions formed on a surface of said semiconductor layer on both sides of said sidewall portion.
A semiconductor device, comprising:
- a semiconductor layer;
- a first insulating film formed in said semiconductor layer;
- a conductive film continuously formed on said semiconductor layer and said first insulation film in a line shape;
- a second insulating film formed between said conductive film and said semiconductor layer along said conductive film;
- a sidewall portion formed on a sidewall of said conductive film along said conductive film, said sidewall portion including a nitride film that is formed along said conductive film and simultaneously separated into a region above said conductive layer and a region above said first insulating film;
- and
- impurity diffusion regions formed on a surface of said semiconductor layer on both sides of said sidewall portion.
Dependencies are inferred from the claim text.