Shared contacts for MOSFET devices
AssigneesSony Corporation, Sony Electronics Inc.
InventorKoji Miyata
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Abstract
In one aspect, the present invention provides electronic devices that comprise a doped semiconductor shared contact between (a) a gate conductor region of at least one transistor and (b) a source/drain diffusion region of at least one transistor. One specific example of such as shared contact, among many others, is a doped SiGe shared contact between (a) a gate conductor region shared by an N-channel MOSFET and a P-channel MOSFET and (b) a drain diffusion region of an N-channel MOSFET or of a P-channel MOSFET.
Claims20
An electronic device comprising a doped semiconductor shared contact between (a) a gate conductor region of at least one transistor and (b) a diffusion region of at least one transistor.
An electronic device comprising a substrate, a doped region of first conductivity type within said substrate, a diffusion region of second conductivity type opposite said first conductivity type within said doped region, a gate region comprising a gate conductor and a gate oxide over said doped region, and a doped semiconductor shared contact between said gate conductor and said diffusion region.
Dependencies are inferred from the claim text.