Method of manufacturing thin film transistor
AssigneeSanyo Electric Co., Ltd.
InventorKoji Suzuki
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Abstract
On a glass substrate an insulating protective layer comprising SiO2 film is formed, and an active layer comprising a p-Si film is formed thereon. Further, a first gat insulating film comprising an SiN film which serves as a lower layer and a second gate insulating film comprising an SiN film which serves as an upper layer are stacked thereon. The second gate insulating layer is then removed by etching with a gate electrode formed thereon acting as a mask. Thus, ions can be doped only through the first gate insulating film to the p-Si film with a low acceleration energy.
Claims7
A method of manufacturing a thin film transistor comprising the steps of:
- forming a semiconductor film on one major surface of a substrate;
- forming a first gate insulating film and a second gate insulating film sequentially in this order on said semiconductor film;
- forming a gate electrode on said second gate insulating film;
- removing a part or all of said second gate insulating film except a region covered by said gate electrode;
- and
- after removing said second gate insulating film, doping ions in said semiconductor film with said gate electrode acting as a doping mask.
7-12. (canceled)
Dependencies are inferred from the claim text.