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US 2006/0186475 A1Published application
Thin film transistor having high mobility and high on-current and method for manufacturing the same
AssigneeNEC Corporation
InventorsHiroshi Tanabe, Hiroshi Haga
Life of this patent
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Abstract
An image input apparatus includes an insulating substrate; polycrystalline silicon islands formed on said insulating substrate; pixels each including thin film transistors and a photodiode formed above said thin film transistors, each of the thin film transistors have a source region, a channel region and a drain region foamed in one of the polycrystalline silicon islands.
Claims8
An image input apparatus comprising:
- an insulating substrate;
- a plurality of polycrystalline silicon islands formed on said insulating substrate;
- a plurality of pixels each including thin film transistors and a photodiode formed above said thin film transistors, each of said thin film transistors having a source region, a channel region and a drain region foamed in one of said polycrystalline silicon islands.
Dependencies are inferred from the claim text.