Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKazutoshi Nakamura
Life of this patent
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Abstract
A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region below the substrate, a base contact region of the vertical type bipolar transistor, a buried layer connected to the vertical type bipolar transistor, a buried contact layer which electrically conducts the drain region and the buried layer and a drift region formed between the drain region and the channel region, which has the same conductive type as that of the drain region and has impurity concentration less than that of the drain region.
Claims18
A semiconductor device, comprising:
- a source region, a channel region and a drain region formed in order along a surface of a substrate;
- a vertical type bipolar transistor formed from the source region below the substrate;
- a base contact region of the vertical type bipolar transistor;
- a buried layer connected to the vertical type bipolar transistor;
- a buried contact layer which electrically conducts the drain region and the buried layer;
- and
- a drift region formed between the drain region and the channel region, which has the same conductive type as that of the drain region and has impurity concentration less than that of the drain region.
A semiconductor device, comprising:
- first and second switching elements connected in parallel to each other, wherein the first switching element includes:
- a first source region, a first channel region and a first drain region formed in order along a surface of a substrate;
- a first base contact region formed adjacent to the first source region;
- and
- a first drift region formed between the first drain region and the first channel region, which has the same conductive type as that of the first drain region and has impurity concentration less than that of the first drain region,
- the second switching element includes:
- a second source region, a second channel region and a second drain region formed in order along a surface of a substrate;
- a vertical bipolar transistor formed from the second source region below the substrate;
- a second base contact region of the vertical bipolar transistor;
- a buried layer connected to the vertical bipolar transistor;
- a buried contact layer which electrically conducts the second drain region and the buried layer;
- and
- a second drift layer formed between the second drain region and the second channel region, which has the same conductive type as that of the second drain region and has impurity concentration less than that of the second drain region.
A semiconductor device, comprising:
- first and second switching elements connected in parallel to each other,
- wherein the first switching element includes:
- a first source region, a first channel region and a first drain region formed in order along a surface of a substrate;
- a first base contact region formed adjacent to the first source region;
- and
- a first drift region formed between the first drain region and the first channel region, which has the same conductive type as that of the first drain region and has impurity concentration less than that of the first drain region,
- the second switching element includes:
- a second source region, a second channel region and a second drain region formed in order along a surface of a substrate;
- a second base contact region formed adjacent to the second source region;
- a hole injection preventive region having a conductive type different from that of the second drain region, a second drift region formed of the same material as that of the first drain region, and a third drift region, each being formed in order adjacent between the second drain region and the second channel region;
- and
- a base layer which is formed on under surfaces of the second drain region, the hole injection preventive region and the second drift region and is formed so that the second drift region protrudes to a side nearer to a gate side.
Dependencies are inferred from the claim text.