Vertical gate semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShuji Mizokuchi, Mitsuhiro Yamanaka, Hiroyuki Gunji
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Abstract
A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113B is formed over the body region 112 extending in a second region 12.
Claims12
1-15. (canceled)
A method of fabricating a vertical trench gate semiconductor device having a first portion functioning as a transistor and a second portion functioning as an electrical contact with a body region of said transistor and arranged adjacent to said first portion, comprising the steps of:
- forming a first drain region in said first portion and a second drain region in said second portion and forming a first body region over said first drain region and a second body region over said second drain region;
- forming a trench in said first body region and said second body region;
- forming a first source region over said first body region;
- and
- forming a second source region over said second body region,
- wherein said first source region and said second source region are formed so as to be electrically connected to each other.
A method of fabricating a vertical trench gate semiconductor device having a first portion functioning as a transistor and a second portion functioning as electrical contact with a body region of said transistor and arranged adjacent to said first portion comprising the steps of:
- forming a first drain region in said first portion and forming a second drain region in said second portion and forming a first body region over said first drain region and forming a second body region over said second drain region;
- forming a trench in each said first body region and second body region;
- forming a gate electrode in said trench so as to form a recessed part in an upper part of said trench and so as to expose said second body region at a wall face of said recessed part;
- and
- forming, in said recessed part, an additional electrode electrically connected with the second body region.
26-37. (canceled)
Dependencies are inferred from the claim text.