Semiconductor device and method of manufacturing the same
OwnerWakako Takeuchiinventor
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Abstract
According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffusion layer formed in the semiconductor substrate, a predetermined portion of the gate electrode in the vicinity of the diffusion layer being provided with an impurity area whose conductive type is different from that of another portion of the gate electrode or an impurity area whose conductive type is the same as that of the other portion and whose concentration is lower than that of the other portion.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on the semiconductor substrate;
- a gate electrode formed on the gate insulating film;
- and
- a diffusion layer formed in the semiconductor substrate,
- a predetermined portion of the gate electrode in the vicinity of the diffusion layer being provided with an impurity area whose conductive type is different from that of another portion of the gate electrode or an impurity area whose conductive type is the same as that of the other portion and whose concentration is lower than that of the other portion.
A semiconductor device comprising:
- a semiconductor substrate;
- a first gate insulating film formed on the semiconductor substrate;
- a first gate electrode formed on the first gate insulating film;
- a second gate insulating film formed on the first gate electrode;
- a second gate electrode formed on the second gate insulating film;
- and
- a diffusion layer formed in the semiconductor substrate,
- a predetermined portion of the first gate electrode in the vicinity of the diffusion layer being provided with an impurity area whose conductive type is different from that of another portion of the first gate electrode or an impurity area whose conductive type is the same as that of the other portion and whose concentration is lower than that of the other portion.
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film on a semiconductor substrate;
- forming a gate electrode on the gate insulating film;
- implanting impurities in a predetermined portion of the gate electrode;
- and
- forming a diffusion layer in the semiconductor substrate,
- a predetermined portion of the gate electrode in the vicinity of the diffusion layer being provided with an impurity area whose conductive type is different from that of another portion of the gate electrode or an impurity area whose conductive type is the same as that of the other portion and whose concentration is lower than that of the other portion.
A method of manufacturing a semiconductor device, comprising:
- forming a first gate insulating film on a semiconductor substrate;
- forming a first gate electrode on the first gate insulating film;
- forming a second gate insulating film on the first gate electrode;
- forming a second gate electrode on the second gate insulating film;
- implanting impurities in a predetermined portion of the first gate electrode;
- and
- forming a diffusion layer in the semiconductor substrate,
- a predetermined portion of the first gate electrode in the vicinity of the diffusion layer being provided with an impurity area whose conductive type is different from that of another portion of the first gate electrode or an impurity area whose conductive type is the same as that of the other portion and whose concentration is lower than that of the other portion.
Dependencies are inferred from the claim text.