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OwnerGeorg Dusberg, Andrew Graham +1inventors
InventorsGeorg Dusberg, Andrew Graham, Franz Kreupl
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The present device relates to memory devices for storing electric charge having memory cells and transistors arranged spatially next to them, and relates in particular to memory devices having memory cells with a high capacitance. In the memory cells which form a memory device to which the invention relates, there is a substrate and at least one memory cell which is arranged on the substrate and includes a first electrode element, which is electrically connected to the substrate, an insulation layer, which has been applied to the first electrode element, and a second electrode element, which has been applied to the insulation layer and is electrically insulated from the first electrode element.
A memory device (100) for storing electric charge, having:
A memory cell array having a multiplicity of memory devices as claimed in one or more of claims 1 to 7 arranged next to one another.
A method for fabricating a memory device (100) for storing electric charge, comprising the following steps:
Dependencies are inferred from the claim text.