Semiconductor device and manufacturing method therof
AssigneeElpida Memory, Inc.
InventorHiroyuki Uchiyama
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Abstract
A semiconductor device and a manufacturing method thereof which enable to secure high yield and increase the capacity of a capacitor are provided. The semiconductor device according to the present invention includes: a plurality of capacitor layers laminated, each capacitor layer including a plurality of storage electrodes, a capacity insulating film covering the surface of the storage electrodes, and a plate electrode provided between the storage electrodes, wherein the plate electrode of each of the laminated capacitor layers are electrically connected to each other and the corresponding storage electrode of each of the laminated capacitor layers are electrically connected to each other.
Claims23
A semiconductor device comprising a plurality of capacitor layers laminated, each capacitor layer including a plurality of storage electrodes, a capacity insulating film covering the storage electrodes, and a plate electrode provided between the storage electrodes, wherein the plate electrode of each of the laminated capacitor layers are electrically connected to each other and the corresponding storage electrode of each of the laminated capacitor layers are electrically connected to each other.
A method of manufacturing a semiconductor device comprising:
- a first step of forming a first capacitor layer having a pillar-shaped first storage electrode, a first capacity insulating film that covers a side surface of the first storage electrode, and a first plate electrode that covers at least a part of the side surface of the first storage electrode via the first capacity insulating film, on a semiconductor substrate;
- and
- a second step of forming a second capacitor layer having a pillar-shaped second storage electrode that is connected to the first storage electrode, a second capacity insulating film that covers a side surface of the second storage electrode, and a second plate electrode that covers at least a part of the side surface of the second storage electrode via the second capacity insulating film and that is connected to the first plate electrode, on the first capacitor layer.
Dependencies are inferred from the claim text.