Semiconductor memory and method for fabricating the same
AssigneeSharp Kabushiki Kaisha
InventorMasahiro Saitoh
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Abstract
A semiconductor memory includes: a semiconductor substrate having a protrusion; a gate insulating film formed on an upper surface of the protrusion; a gate electrode formed on the gate insulating film; diffusion regions formed in portions of the substrate on both sides of the protrusion, the diffusion regions being disposed so as to reach edges of side surfaces of the protrusion; a channel region between the diffusion regions, the channel region being located below the gate electrode; and a charge-retaining portion formed on at least one side surface of the protrusion.
Claims13
A semiconductor memory comprising:
- a semiconductor substrate having a protrusion;
- a gate insulating film formed on an upper surface of the protrusion;
- a gate electrode formed on the gate insulating film;
- diffusion regions formed in portions of the substrate on both sides of the protrusion, the diffusion regions being disposed so as to reach edges of side surfaces of the protrusion;
- a channel region between the diffusion regions, the channel region being located below the gate electrode;
- and
- a charge-retaining portion formed on at least one side surface of the protrusion.
A method for fabricating a semiconductor memory comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- forming a film, as a material of a gate electrode, on the gate insulating film, the material film being made of a material greater in thermal oxidation rate than the substrate;
- forming the gate electrode by processing the material film;
- forming a protrusion on a surface of the substrate by processing the substrate;
- forming diffusion regions in the surface of the substrate;
- and
- forming charge-retaining layers on side surfaces of the protrusion.
A method for fabricating a semiconductor memory comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- forming a film, as a material of a gate electrode, on the gate insulating film, the material film being made of a material greater in thermal oxidation rate than the substrate;
- forming the gate electrode by processing the material film;
- forming a protrusion on a surface of the substrate by processing the substrate;
- forming charge-retaining layers on side surfaces of the protrusion;
- and
- forming diffusion regions in portions of the substrate below the charge-retaining layers.
Dependencies are inferred from the claim text.