Magnetic memory
AssigneeTDK Corporation
InventorToshikazu Hosobuchi
Life of this patent
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Abstract
A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a fixed magnetization direction, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer, and an area of a cross section of the first magnetic layer perpendicular to a stack direction is not less than 0.001 μm2, and less than 0.02 μm2.
Claims7
A magnetic memory comprising a plurality of storage areas each of which has a magnetoresistive effect element,
- wherein the magnetoresistive effect element comprises:
- a first magnetic layer which contains a ferromagnetic material and a magnetization direction of which varies according to a density and a spin direction of an electric current flowing in a stack direction;
- a second magnetic layer which contains a ferromagnetic material, which is provided above one surface of the first magnetic layer, and a magnetization direction of which is fixed;
- a nonmagnetic layer which contains a nonmagnetic material and which is provided between the first magnetic layer and the second magnetic layer;
- a third magnetic layer which contains a ferromagnetic material, which is provided above another surface of the first magnetic layer, and a magnetization direction of which is fixed;
- and
- a first nonmagnetic conductive layer which contains a nonmagnetic and electrically conductive material and which is provided between the first magnetic layer and the third magnetic layer, and
- wherein an area of a cross section of the first magnetic layer perpendicular to the stack direction is not less than 0.001 μm2, and less than 0.02 μm2.
A magnetic memory comprising a plurality of storage areas each of which has a tunneling magnetoresistive effect element,
- wherein the tunneling magnetoresistive effect element comprises:
- a first magnetic layer which contains a ferromagnetic material and a magnetization direction of which varies according to a density and a spin direction of an electric current flowing in a stack direction;
- a second magnetic layer which contains a ferromagnetic material, which is provided above one surface of the first magnetic layer, and a magnetization direction of which is fixed;
- a nonmagnetic insulating layer which contains a nonmagnetic and insulating material and which is provided between the first magnetic layer and the second magnetic layer;
- a third magnetic layer which contains a ferromagnetic material, which is provided above another surface of the first magnetic layer, and a magnetization direction of which is fixed;
- and
- a first nonmagnetic conductive layer which contains a nonmagnetic and electrically conductive material and which is provided between the first magnetic layer and the third magnetic layer, and
- wherein an area of a cross section of the first magnetic layer perpendicular to the stack direction is not less than 0.001 μm2, and less than 0.02 μm2.
Dependencies are inferred from the claim text.