Light-emitting device, liquid-crystal display device and method for manufacturing same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Shunpei Yamazaki
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Abstract
The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof) in the insulating layer. Furthermore, after planarizing the surface of the insulating layer, a metal protection film (Ti, TiN, Ta, TaN or the like) is formed in an exposed part. By using the buried interconnection in part of various lines (gate line, source line, power supply line, common line and the like) for a light-emitting device or liquid crystal display device, line resistance is decreased.
Claims16
A light-emitting device comprising:
- a substrate having an insulating surface;
- a second substrate having light transmission property;
- a pixel region having a plurality of light-emitting elements, the light emitting element having a first electrode, a layer containing organic compound provided on and in contact with the first electrode, and a second electrode provided on and in contact with the layer containing organic compound;
- and
- a drive circuit having thin-film transistors,
- wherein the pixel region is arranged with a gate line, source line or power supply line made with a buried interconnection.
A liquid-crystal display device comprising:
- a first substrate having an insulating surface;
- a second substrate having light transmission property;
- a pixel region having a first electrode, a second electrode and a liquid-crystal material sandwiched between the first and second electrodes;
- and
- a drive circuit having thin-film transistors,
- whereby the pixel region is arranged with a gate line or source line made with a buried interconnection.
A method for manufacturing a light-emitting device comprising:
- forming an etching-stop layer having an electric conductivity on an insulating surface;
- forming a first insulating film covering the etching-stop layer;
- etching the first insulating film to open an opening reaching the etching-stop layer;
- forming a seed and carrying out plating to form a buried interconnection covering the opening;
- planarizing a surface of the buried interconnection;
- forming a second insulating film containing aluminum;
- forming a third insulating film on the second insulating film;
- forming a semiconductor layer on the third insulating film;
- forming a fourth insulating film on the semiconductor layer;
- forming a gate electrode on the fourth insulating film;
- forming a line connecting to the semiconductor layer and a line connecting the buried interconnection;
- forming a first electrode;
- and
- forming a layer containing organic compound on the first electrode and a second electrode on the layer containing organic compound.
A method for manufacturing a liquid-crystal display device comprising:
- forming an etching-stop layer having an electric conductivity on an insulating surface;
- forming a first insulating film covering the etching-stop layer, etching the first insulating film to open an opening reaching the etching-stop layer;
- forming a seed and carrying out plating to form a buried interconnection covering the opening;
- planarizing a surface of the buried interconnection,
- forming a second insulating film containing aluminum,
- forming a third insulating film on the second insulating film;
- forming a semiconductor layer on the third insulating film;
- forming a fourth insulating film on the semiconductor layer;
- forming a gate electrode on the fourth insulating film, and
- forming a source line connected to the semiconductor layer and a line connecting between the buried interconnection and the gate line.
Dependencies are inferred from the claim text.