Back to results
US 2006/0186440 A1Published application
Phase change memory device and method of manufacture thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsiung Wang, Li-Shyue Lai, Denny Tang, Wen-Chin Lin
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
Claims31
A method of manufacturing a memory device, the method comprising:
- forming an electrode over a substrate;
- forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening;
- and
- forming a phase change feature over the electrode and on the tapered electrode contact surface.
1 more element
A method of manufacturing a memory device, the method comprising:
- forming an electrode over a substrate;
- forming a first insulator over the electrode;
- forming an opening in the electrode through the first insulator to provide a tapered electrode contact surface proximate the opening;
- forming a second insulator over the first insulator and the opening of the electrode;
- removing a portion of the second insulator, exposing the first insulator and the tapered electrode contact surface;
- and
- forming a phase change feature over the first insulator, the second insulator, and on the tapered electrode contact surface.
4 more elements
A memory device, comprising:
- a substrate
- an electrode located over the substrate, the electrode having an opening to provide a tapered electrode contact surface proximate the opening;
- an insulator located over the electrode, the insulator exposing the tapered electrode contact surface;
- and
- a patterned phase change feature located over the insulator and over the tapered electrode contact surface.
2 more elements
Dependencies are inferred from the claim text.