Semiconductor device, a manufacturing method thereof, and a camera
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorHiroshi Tanaka
Life of this patent
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Abstract
A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.
Claims16
1-20. (canceled)
A solid-state image sensor comprising;
- a semiconductor substrate having a photoelectric conversion region;
- an insulating film formed on said semiconductor substrate;
- an electrode formed on said insulating film, said electrode for reading signal charge from said photoelectric conversion region through said insulating film;
- and
- a metal light shielding film located over said electrode and a part of said photoelectric conversion region, wherein
- a part of said insulating film located above said photoelectric conversion region has a first thickness,
- a part of said insulating film located below said electrode has a second thickness,
- the part of said insulating film having the first thickness includes at least a silicon oxide film and a second insulating film located on the silicon oxide film, and
- a thickness of the second insulating film is greater than a thickness of the silicon oxide film.
A camera comprising a solid-state image sensor,
- wherein said solid-state image sensor includes:
- a semiconductor substrate having a photoelectric conversion region;
- an insulating film formed on said semiconductor substrate;
- an electrode formed on said insulating film, said electrode for reading signal charge from said photoelectric conversion region through said insulating film;
- and
- a metal light shielding film located over said electrode and a part of said photoelectric conversion region, and wherein
- a part of said insulating film located above said photoelectric conversion region has a first thickness,
- a part of said insulating film located below said electrode has a second thickness,
- the part of said insulating film having the first thickness includes at least a silicon oxide film and a second insulating film located on the silicon oxide film, and
- a thickness of the second insulating film is greater than a thickness of the silicon oxide film.
A method of manufacturing a solid-state image sensor,
- the solid-state image sensor including:
- a semiconductor substrate having a photoelectric conversion region, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, the electrode for reading signal charge from the photoelectric conversion region through the insulating film, and a metal light shielding film located over the electrode and a part of the photoelectric conversion region, wherein a part of the insulating film located above the photoelectric conversion region has a first thickness, a part of the insulating film located below the electrode has a second thickness, the part of the insulating film having the first thickness includes at least a silicon oxide film and a second insulating film located on the silicon oxide film, and a thickness of the second insulating film is greater than a thickness of the silicon oxide film,
- the method comprising forming the part of the insulating film having the second thickness without re-oxidizing the silicon oxide film.
Dependencies are inferred from the claim text.