Semiconductor device

A semiconductor device, comprising:

• a silicon substrate defined with a device region by a device isolation region and including a channel region in said device region;
• a gate electrode formed on said silicon substrate in correspondence to said channel region via a gate insulation film, said gate electrode carrying a pair of sidewall insulation films respectively on a pair of mutually opposing sidewall surfaces thereof;
• source and drain extension regions of p-type formed in said silicon substrate at respective lateral sides of said gate electrode across said channel region;
• source and drain regions of p-type formed in said silicon substrate at respective outer sides of said sidewall insulation films respectively in continuation with said source extension region and said drain extension region;
• and
• a pair of SiGe mixed crystal regions formed in said silicon substrate at respective outer sides of said sidewall insulation films epitaxially to said silicon substrate so as to be enclosed respectively by said source region and said drain region,
• each of said SiGe mixed crystal regions being grown to a level above a level of a gate insulation film interface between said gate insulation film and said silicon substrate,
• wherein there is provided a compressive stress film at respective top surfaces of said pair of SiGe mixed crystal regions.